IXGT2N250

new-10%

Manufacturer part number:IXGT2N250

Manufacturer:IXYS

Description:IGBT 2500V 5.5A 32W TO-268

Case Package:SOT-23

Datasheet:IXGT2N250 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	32W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	32W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3.1V
Max Collector Current	5.5A
Collector Emitter Breakdown Voltage	2.5kV
Voltage - Collector Emitter Breakdown (Max)	2500V
Turn On Time	115 ns
Vce(on) (Max) @ Vge, Ic	3.1V @ 15V, 2A
Turn Off Time-Nom (toff)	278 ns
Gate Charge	10.5nC
Current - Collector Pulsed (Icm)	13.5A
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
RoHS Status	ROHS3 Compliant