STGF17NC60SD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGF17NC60SD Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
PowerMESH™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
32W
Reach Compliance Code
not_compliant
Base Part Number
STGF17
Input Type
Standard
Power - Max
32W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.9V
Max Collector Current
17A
Reverse Recovery Time
31 ns
Collector Emitter Breakdown Voltage
600V
Test Condition
480V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.9V @ 15V, 12A
Gate Charge
54.5nC
Current - Collector Pulsed (Icm)
80A
Td (on/off) @ 25°C
17.5ns/175ns
Switching Energy
135μJ (on), 815μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.2V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.70000
$2.7
10
$2.43800
$24.38
100
$1.98970
$198.97
500
$1.66256
$831.28
STGF17NC60SD Product Details
STGF17NC60SD Description
STGF17NC60SD developed by STMicroelectronics is a type of fast IGBT co-packaged with an ultrafast freewheeling diode featuring high voltage. Based on the PowerMESH? technology, it is able to deliver an excellent compromise between low conduction loss and fast switching performance. Optimized performance is provided for medium operating frequencies.
STGF17NC60SD Features
IGBT co-packaged with ultrafast freewheeling diode
Low conduction loss
Fast switching performance
Very low on-voltage drop (VCE(sat))
Optimized performance for medium operating frequencies