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IKP10N60TXKSA1

IKP10N60TXKSA1

IKP10N60TXKSA1

Infineon Technologies

IKP10N60TXKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKP10N60TXKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2007
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 110W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 115ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 20A
Turn On Time 21 ns
Test Condition 400V, 10A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 10A
Turn Off Time-Nom (toff) 296 ns
IGBT Type NPT, Trench Field Stop
Gate Charge 62nC
Current - Collector Pulsed (Icm) 30A
Td (on/off) @ 25°C 12ns/215ns
Switching Energy 430μJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.19000 $2.19
10 $1.97100 $19.71
100 $1.58410 $158.41
500 $1.30150 $650.75
1,000 $1.07839 $1.07839
IKP10N60TXKSA1 Product Details

IKP10N60TXKSA1 Description


IKP10N60TXKSA1 is a 600v  IGBT in TRENCHSTOP™ and Fieldstop technology with a soft, fast recovery anti-parallel Emitter Controlled HE diode. The IKP10N60TXKSA1 can be designed in variable Speed Drive for washing machines, air conditioners, and induction cooking. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor IKP10N60TXKSA1 is in the TO-220-3 package with 110W Power dissipations.



IKP10N60TXKSA1 Features


Very low VCE(sat) 1.5V (typ.)

Maximum Junction Temperature 175°C

Short circuit withstand time 5μs

NPT technology offers easy parallel switching capability due to a positive temperature coefficient in VCE(sat)

Low EMI

Low Gate Charge

Very soft, fast recovery anti-parallel Emitter Controlled HE diode

Qualified according to JEDEC1 for target applications

Pb-free lead plating; RoHS compliant



IKP10N60TXKSA1 Applications


Washing machines

Air conditioners 

Induction cooking

Uninterrupted Power Supply


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