IKP10N60TXKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IKP10N60TXKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2007
Series
TrenchStop®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
110W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Reverse Recovery Time
115ns
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
20A
Turn On Time
21 ns
Test Condition
400V, 10A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.05V @ 15V, 10A
Turn Off Time-Nom (toff)
296 ns
IGBT Type
NPT, Trench Field Stop
Gate Charge
62nC
Current - Collector Pulsed (Icm)
30A
Td (on/off) @ 25°C
12ns/215ns
Switching Energy
430μJ
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.19000
$2.19
10
$1.97100
$19.71
100
$1.58410
$158.41
500
$1.30150
$650.75
1,000
$1.07839
$1.07839
IKP10N60TXKSA1 Product Details
IKP10N60TXKSA1 Description
IKP10N60TXKSA1 is a 600v IGBT in TRENCHSTOP™ and Fieldstop technology with a soft, fast recovery anti-parallel Emitter Controlled HE diode. The IKP10N60TXKSA1 can be designed in variable Speed Drive for washing machines, air conditioners, and induction cooking. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor IKP10N60TXKSA1 is in the TO-220-3 package with 110W Power dissipations.
IKP10N60TXKSA1 Features
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5μs
NPT technology offers easy parallel switching capability due to a positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications