RGT30NS65DGTL

new-10%

Manufacturer part number:RGT30NS65DGTL

Manufacturer:ROHM Semiconductor

Description:IGBT 650V 30A 133W TO-263S

Case Package:SOT-23

Datasheet:RGT30NS65DGTL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.946308g
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Max Power Dissipation	133W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	133W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	18 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	64 ns
Collector Emitter Voltage (VCEO)	650V
Max Collector Current	30A
Reverse Recovery Time	55 ns
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	1.65V
Max Breakdown Voltage	650V
Turn On Time	40 ns
Test Condition	400V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 15A
Max Junction Temperature (Tj)	175°C
Continuous Collector Current	30A
Turn Off Time-Nom (toff)	204 ns
IGBT Type	Trench Field Stop
Gate Charge	32nC
Current - Collector Pulsed (Icm)	45A
Td (on/off) @ 25°C	18ns/64ns
Height	5mm
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant