Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IKZ75N65EL5XKSA1

IKZ75N65EL5XKSA1

IKZ75N65EL5XKSA1

Infineon Technologies

IKZ75N65EL5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKZ75N65EL5XKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-247-4
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2013
Series TrenchStop™ 5
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Max Power Dissipation 536W
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 536W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 100A
Reverse Recovery Time 59 ns
Collector Emitter Breakdown Voltage 650V
Turn On Time 133 ns
Test Condition 400V, 75A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.35V @ 15V, 75A
Switching Frequency 50Hz
Turn Off Time-Nom (toff) 474 ns
Gate Charge 436nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 120ns/275ns
Switching Energy 1.57mJ (on), 3.2mJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $12.160487 $12.160487
10 $11.472157 $114.72157
100 $10.822790 $1082.279
500 $10.210179 $5105.0895
1000 $9.632245 $9632.245
IKZ75N65EL5XKSA1 Product Details

IKZ75N65EL5XKSA1 Description


The IKZ75N65EL5XKSA1 is a Low VCE(sat)IGBT inTRENCHSTOPTM5 technology co-packed with RAPID1 fast and soft antiparallel diode.



IKZ75N65EL5XKSA1 Features


  • Low VCE(sat) L5 technology offering

  • Very low collector-emitter saturation voltage VCEsat

  • Best-in-Class trade-off between conduction and switching losses

  • 650V breakdown voltage

  • Low gate charge QG

  • Maximum junction temperature 175°C

  • Qualified according to JEDEC for target applications

  • Pb-free lead plating

  • RoHS compliant



IKZ75N65EL5XKSA1 Applications


  • Uninterruptible power supplies

  • Solarphotovoltaicinverters

  • Welding machines


Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News