AFGHL75T65SQD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
AFGHL75T65SQD Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-247-3 Variant
Operating Temperature
-55°C~175°C TJ
Series
Automotive, AEC-Q101
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Input Type
Standard
Power - Max
375W
Reverse Recovery Time
36ns
Voltage - Collector Emitter Breakdown (Max)
650V
Current - Collector (Ic) (Max)
80A
Test Condition
400V, 75A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 75A
IGBT Type
Trench Field Stop
Gate Charge
136nC
Current - Collector Pulsed (Icm)
300A
Td (on/off) @ 25°C
25ns/106ns
Switching Energy
1.86mJ (on), 1.13mJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.90000
$6.9
500
$6.831
$3415.5
1000
$6.762
$6762
1500
$6.693
$10039.5
2000
$6.624
$13248
2500
$6.555
$16387.5
AFGHL75T65SQD Product Details
AFGHL75T65SQD Description
Utilizing cutting-edge 4th generation high-speed IGBT technology with field stop. The AEC Q101 approved AFGHL75T65SQD provides the best performance for both hard and soft switching topologies in automotive applications.
AFGHL75T65SQD Features
AEC?Q101 Qualified
Maximum Junction Temperature: TJ = 175°C
Positive Temperature Co?efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 75 A