IKQ120N60TXKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IKQ120N60TXKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2014
Series
TrenchStop™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
833W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Element Configuration
Single
Input Type
Standard
Power - Max
833W
Transistor Application
POWER CONTROL
Halogen Free
Halogen Free
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
160A
Reverse Recovery Time
241 ns
Collector Emitter Breakdown Voltage
600V
Turn On Time
84 ns
Test Condition
400V, 120A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 120A
Turn Off Time-Nom (toff)
398 ns
IGBT Type
Trench Field Stop
Gate Charge
703nC
Current - Collector Pulsed (Icm)
480A
Td (on/off) @ 25°C
50ns/565ns
Switching Energy
6.2mJ (on), 5.9mJ (off)
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$7.489255
$7.489255
10
$7.065335
$70.65335
100
$6.665410
$666.541
500
$6.288123
$3144.0615
1000
$5.932191
$5932.191
IKQ120N60TXKSA1 Product Details
IKQ120N60TXKSA1 IGBT Description
The IKQ120N60TXKSA1 uses the Hard switching 600 V, 120 A TRENCHSTOP? IGBT technology in a TO-247PLUS package for higher current capability. The TO-247PLUS package allows up to 120 A in 600 V with the same outer dimensions as the industry-standard TO-247. Also, the total backside active thermal pad area has been increased to improve the heat dissipation capabilities of the package.
IKQ120N60TXKSA1 IGBT Features
Highest current rating co-pack 600 V in 100 A and 120 A
Low EMI
Short circuit withstand time: 5μs
35% bigger active thermal pad area for up to 20% lower thermal resistance R th(jh)
Extended creepage distance of 4.25 mm – 2 mm bigger than TO-247
Very soft, fast recovery anti-parallel Emitter-Controlled HR diode