SGP5N60RUFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
SGP5N60RUFDTU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2002
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
600V
Max Power Dissipation
60W
Current Rating
5A
Element Configuration
Single
Power Dissipation
60W
Input Type
Standard
Power - Max
60W
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
8A
Reverse Recovery Time
37 ns
Collector Emitter Breakdown Voltage
600V
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
8A
Collector Emitter Saturation Voltage
2.2V
Test Condition
300V, 5A, 40Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 5A
Gate Charge
16nC
Current - Collector Pulsed (Icm)
15A
Td (on/off) @ 25°C
13ns/34ns
Switching Energy
88μJ (on), 107μJ (off)
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.986667
$0.986667
10
$0.930818
$9.30818
100
$0.878131
$87.8131
500
$0.828425
$414.2125
1000
$0.781533
$781.533
SGP5N60RUFDTU Product Details
SGP5N60RUFDTU Description
SGP5N60RUFDTU is a member of the RUFD series of Insulated Gate Bipolar Transistors (IGBTs) developed by ON Semiconductor. It is able to deliver low conduction and switching losses, high input impedance, as well as short circuit ruggedness. As a result, it is ideally suitable for a wide range of applications, including AC & DC motor controls, general-purpose inverters, robotics, and servo controls.