FGI3236-F085 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
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FGI3236-F085 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
11 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Weight
2.084g
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2017
Series
Automotive, AEC-Q101, EcoSPARK®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
187W
JESD-30 Code
R-PSIP-T3
Number of Outputs
1
Number of Elements
1
Rise Time-Max
7000ns
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Logic
Power - Max
187W
Clamping Voltage
360V
Transistor Application
AUTOMOTIVE IGNITION
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.32V
Max Collector Current
44A
Collector Emitter Breakdown Voltage
360V
Turn On Time
2350 ns
Test Condition
300V, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic
1.4V @ 4V, 6A
Turn Off Time-Nom (toff)
7040 ns
Gate Charge
20nC
Td (on/off) @ 25°C
-/5.4μs
Gate-Emitter Thr Voltage-Max
2.2V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
400
$1.61448
$645.792
FGI3236-F085 Product Details
FGI3236-F085 Description
The fundamental function of the IGBT is rather simple. A positive voltage UGE from gate to emitter turns on the MOSFET. Then, the voltage connected to the collector can drive the base current through the bipolar transistor and the MOSFET; the bipolar transistor turns on and the load current can flow.