IKW50N65WR5XKSA1               Description

A trench-gate field-stop insulated gate bipolar transistor (IGBT) is a device that might be used in such applications as motor controllers, welding machines, induction heating, and power inverters.

IKW50N65WR5XKSA1             Features

? VCE = 650 V

? IC = 50 A

? Powerful monolithic diode optimized for ZCS applications

? High ruggedness, temperature stable behavior

? Very low VCEsat and low Eoff

? Easy paralleling capability due to positive temperature coefficient in VCEsat

? Low EMI

? Low electrical parameters depending (dependence) on temperature

? Qualified according to JESD-022 for target applications

? Pb-free lead plating; RoHS compliant

? Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

IKW50N65WR5XKSA1                 Applications

? Welding

? PFC

? ZCS - converters