IRG4PH50KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRG4PH50KPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2000
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Additional Feature
LOW CONDUCTION LOSS
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
1.2kV
Max Power Dissipation
200W
Current Rating
45A
Number of Elements
1
Element Configuration
Single
Power Dissipation
200W
Case Connection
COLLECTOR
Input Type
Standard
Transistor Application
MOTOR CONTROL
Rise Time
29ns
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
3.5V
Max Collector Current
45A
JEDEC-95 Code
TO-247AC
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
3.28V
Turn On Time
64 ns
Test Condition
960V, 24A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic
3.5V @ 15V, 24A
Turn Off Time-Nom (toff)
660 ns
Gate Charge
180nC
Current - Collector Pulsed (Icm)
90A
Td (on/off) @ 25°C
36ns/200ns
Switching Energy
1.21mJ (on), 2.25mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Fall Time-Max (tf)
190ns
Height
20.701mm
Length
15.875mm
Width
5.3086mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.988070
$2.98807
10
$2.818935
$28.18935
100
$2.659373
$265.9373
500
$2.508842
$1254.421
1000
$2.366832
$2366.832
IRG4PH50KPBF Product Details
IRG4PH50KPBF Description
IRG4PH50KPBF IGBT driver is a high-voltage, high-speed power MOSFET and IGBT driver having high and low side referenced output channels that are dependent on each other. IRG4PH50KPBF MOSFET can be used to drive a high-side N-channel power MOSFET or IGBT. IRG4PH50KPBF Infineon Technologies half-bridge gate driver is used in isolated dc-to-dc power supply modules, solar inverters.
IRG4PH50KPBF Features
IGBT co-packaged
Under voltage lockout
Floating channel designed for bootstrap operation
Combines low conduction losses with the high switching speed