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IRG4PH50KPBF

IRG4PH50KPBF

IRG4PH50KPBF

Infineon Technologies

IRG4PH50KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4PH50KPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2000
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 200W
Current Rating 45A
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 29ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.5V
Max Collector Current 45A
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.28V
Turn On Time 64 ns
Test Condition 960V, 24A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 24A
Turn Off Time-Nom (toff) 660 ns
Gate Charge 180nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 36ns/200ns
Switching Energy 1.21mJ (on), 2.25mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 190ns
Height 20.701mm
Length 15.875mm
Width 5.3086mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.988070 $2.98807
10 $2.818935 $28.18935
100 $2.659373 $265.9373
500 $2.508842 $1254.421
1000 $2.366832 $2366.832
IRG4PH50KPBF Product Details

IRG4PH50KPBF Description

 

IRG4PH50KPBF IGBT driver is a high-voltage, high-speed power MOSFET and IGBT driver having high and low side referenced output channels that are dependent on each other. IRG4PH50KPBF MOSFET can be used to drive a high-side N-channel power MOSFET or IGBT. IRG4PH50KPBF Infineon Technologies half-bridge gate driver is used in isolated dc-to-dc power supply modules, solar inverters.

 

 

IRG4PH50KPBF Features

 

IGBT co-packaged

Under voltage lockout

Floating channel designed for bootstrap operation

Combines low conduction losses with the high switching speed

Tighter parameter distribution

 

 

IRG4PH50KPBF Applications

 

Power Management

Light vehicles

Power tools

Reference Design

Robotics

 


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