FGA50N100BNTTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGA50N100BNTTU Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Weight
6.401g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
156W
Element Configuration
Single
Input Type
Standard
Power - Max
156W
Collector Emitter Voltage (VCEO)
1kV
Max Collector Current
50A
Collector Emitter Breakdown Voltage
1kV
Voltage - Collector Emitter Breakdown (Max)
1000V
Test Condition
600V, 60A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.9V @ 15V, 60A
IGBT Type
NPT and Trench
Gate Charge
257nC
Current - Collector Pulsed (Icm)
200A
Td (on/off) @ 25°C
34ns/243ns
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.364640
$4.36464
10
$4.117585
$41.17585
100
$3.884514
$388.4514
500
$3.664636
$1832.318
1000
$3.457204
$3457.204
FGA50N100BNTTU Product Details
FGA50N100BNTTU Description
The FGA50N100BNTTU is a 1000V, 50A NPT-Trench IGBT CO-PAK. Trench insulated gate bipolar transistors (IGBTs) with NPT technology display exceptional performance in conduction and switching characteristics in addition to improved avalanche robustness. These gadgets are ideal for home appliances, PFC, I-H jars, induction heaters, and UPS.
FGA50N100BNTTU Features
High Input Impedance
RoHS Compliant
High Speed Switching
Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A