FGH40N65UFDTU

new-10%

Manufacturer part number:FGH40N65UFDTU

Manufacturer:ON Semiconductor

Description:IGBT 650V 80A 290W TO247

Case Package:SOT-23

Datasheet:FGH40N65UFDTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	290W
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	290W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	650V
Max Collector Current	80A
Reverse Recovery Time	45 ns
JEDEC-95 Code	TO-247AB
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	650V
Turn On Time	69 ns
Test Condition	400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 40A
Turn Off Time-Nom (toff)	160 ns
IGBT Type	Field Stop
Gate Charge	120nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	24ns/112ns
Switching Energy	1.19mJ (on), 460μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	60ns
Height	20.6mm
Length	15.6mm
Width	4.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant