AUIRGP4066D1-E

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Manufacturer part number:AUIRGP4066D1-E

Manufacturer:Infineon Technologies

Description:AUIRGP4066D1-E datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:AUIRGP4066D1-E Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2012
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	454W
Number of Elements	1
Rise Time-Max	100ns
Element Configuration	Single
Power Dissipation	454W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	50 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	200 ns
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	140A
Reverse Recovery Time	240ns
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.7V
Turn On Time	115 ns
Test Condition	400V, 75A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 75A
Turn Off Time-Nom (toff)	320 ns
IGBT Type	Trench
Gate Charge	225nC
Current - Collector Pulsed (Icm)	225A
Td (on/off) @ 25°C	50ns/200ns
Switching Energy	4.24mJ (on), 2.17mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	80ns
Height	20.7mm
Length	15.87mm
Width	5.13mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free

Quantity	Unit Price	Ext. Price
1	$9.755508	$9.755508
10	$9.203310	$92.0331
100	$8.682368	$868.2368
500	$8.190913	$4095.4565
1000	$7.727276	$7727.276

AUIRGP4066D1-E Description

The AUIRGP4066D1-E is a 600v insulated gate bipolar transistor with an ultrafast soft recovery diode. The Infineon AUIRGP4066D1-E provides high efficiency in a wide range of applications, rugged transient performance for increased reliability, and excellent current sharing in parallel operation. The transistor AUIRGP4066D1-E is suitable for a wide range of frequencies due to Low VcE (ON) and Low Switching losses. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor AUIRGP4066D1-E is in the TO-247AD package with 454w Power Dissipation.