IKZ75N65NH5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IKZ75N65NH5XKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-4
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2008
Series
TrenchStop™ 5
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
395W
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
395W
Transistor Application
POWER CONTROL
Halogen Free
Halogen Free
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
650V
Max Collector Current
90A
Reverse Recovery Time
59 ns
Collector Emitter Breakdown Voltage
650V
Turn On Time
71 ns
Test Condition
400V, 37.5A, 27 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 75A
Turn Off Time-Nom (toff)
485 ns
IGBT Type
Trench
Gate Charge
166nC
Current - Collector Pulsed (Icm)
300A
Td (on/off) @ 25°C
52ns/412ns
Switching Energy
880μJ (on), 520μJ (off)
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
240
$6.92358
$1661.6592
IKZ75N65NH5XKSA1 Product Details
IKZ75N65NH5XKSA1 Description
IKZ75N65NH5XKSA1 is a single IGBT from the manufacturer Infineon Technologies with the Collector-Emitter Voltage (VCEO) of 650V. The operating temperature of the IKZ75N65NH5XKSA1 is -40°C~175°C TJ and its maximum power dissipation is 395W. IKZ75N65NH5XKSA1 has 4 pins and it is available in Tube packaging way.
IKZ75N65NH5XKSA1 Features
Ultra low loss switching thanks to Kelvin emitter pin in combination with TRENCHSTOPTM5
Best-in-class efficiency in hard switching and resonant topologies
Plug and play replacement of previous generation IGBTs
650V break down voltage
Low gate charge QG
IGBT copacked with RAPID2 fast and soft antiparallel diode