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IXGK50N60B

IXGK50N60B

IXGK50N60B

IXYS

IGBT 600V 75A 300W TO264

SOT-23

IXGK50N60B Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Weight 10.000011g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2000
Series HiPerFAST™
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 300W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 75A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*50N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 50ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 75A
Collector Emitter Breakdown Voltage 600V
Turn On Time 100 ns
Test Condition 480V, 50A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 50A
Turn Off Time-Nom (toff) 450 ns
Gate Charge 160nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 50ns/150ns
Switching Energy 3mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status RoHS Compliant
Lead Free Lead Free

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