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RJH60D1DPP-M0#T2

RJH60D1DPP-M0#T2

RJH60D1DPP-M0#T2

Renesas Electronics America

IGBT 600V 20A 20.8W TO220FL

SOT-23

RJH60D1DPP-M0#T2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2007
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 20.8W
Base Part Number RJH60D
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection ISOLATED
Input Type Standard
Turn On Delay Time 30 ns
Power - Max 30W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 42 ns
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 20A
Reverse Recovery Time 70 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.6V
Turn On Time 43 ns
Test Condition 300V, 10A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 10A
Turn Off Time-Nom (toff) 117 ns
IGBT Type Trench
Gate Charge 13nC
Td (on/off) @ 25°C 30ns/42ns
Switching Energy 100μJ (on), 130μJ (off)
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.340166 $0.340166
10 $0.320911 $3.20911
100 $0.302747 $30.2747
500 $0.285610 $142.805
1000 $0.269444 $269.444

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