IMW120R030M1HXKSA1

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Manufacturer part number:IMW120R030M1HXKSA1

Manufacturer:Infineon Technologies

Description:SiCFET (Silicon Carbide) N-Channel 40m Ω @ 25A, 18V +23V, -7V 2.12nF @ 800V 63nC @ 18V 1.2kV TO-247-3

Case Package:SOT-23

Datasheet:IMW120R030M1HXKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	-55°C~175°C TJ
Series	CoolSiC™
Part Status	Active
Moisture Sensitivity Level (MSL)	Not Applicable
Technology	SiCFET (Silicon Carbide)
Power Dissipation-Max	227W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	40m Ω @ 25A, 18V
Vgs(th) (Max) @ Id	5.7V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds	2.12nF @ 800V
Current - Continuous Drain (Id) @ 25°C	56A Tc
Gate Charge (Qg) (Max) @ Vgs	63nC @ 18V
Drain to Source Voltage (Vdss)	1.2kV
Drive Voltage (Max Rds On,Min Rds On)	15V 18V
Vgs (Max)	+23V, -7V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$28.15000	$28.15
500	$27.8685	$13934.25
1000	$27.587	$27587
1500	$27.3055	$40958.25
2000	$27.024	$54048
2500	$26.7425	$66856.25

IMW120R030M1HXKSA1 Description

IMW120R030M1HXKSA1 SiC MOSFET is a type of Power MOSFET that is build on a trench semiconductor process optimized to combine performance with reliability. IMW120R030M1HXKSA1 MOSFET is ideal for low frequency applications requiring performance and ruggedness. Infineon Technologies IMW120R030M1HXKSA1 is general use and is suitable for bi-directional topologies, power factor correction circuits, and DC-AC inverters or DC-DC converters.