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IMW120R030M1HXKSA1

IMW120R030M1HXKSA1

IMW120R030M1HXKSA1

Infineon Technologies

SiCFET (Silicon Carbide) N-Channel 40m Ω @ 25A, 18V +23V, -7V 2.12nF @ 800V 63nC @ 18V 1.2kV TO-247-3

SOT-23

IMW120R030M1HXKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~175°C TJ
Series CoolSiC™
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Technology SiCFET (Silicon Carbide)
Power Dissipation-Max 227W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 40m Ω @ 25A, 18V
Vgs(th) (Max) @ Id 5.7V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds 2.12nF @ 800V
Current - Continuous Drain (Id) @ 25°C 56A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 18V
Drain to Source Voltage (Vdss) 1.2kV
Drive Voltage (Max Rds On,Min Rds On) 15V 18V
Vgs (Max) +23V, -7V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $28.15000 $28.15
500 $27.8685 $13934.25
1000 $27.587 $27587
1500 $27.3055 $40958.25
2000 $27.024 $54048
2500 $26.7425 $66856.25
IMW120R030M1HXKSA1 Product Details

IMW120R030M1HXKSA1 Description

 

IMW120R030M1HXKSA1 SiC MOSFET is a type of Power MOSFET that is build on a  trench semiconductor process optimized to combine performance with reliability. IMW120R030M1HXKSA1 MOSFET is ideal for low frequency applications requiring performance and ruggedness. Infineon Technologies IMW120R030M1HXKSA1 is general use and is suitable for bi-directional topologies, power factor correction circuits, and DC-AC inverters or DC-DC converters.

 

 

IMW120R030M1HXKSA1 Features

 

Reduced system complexity

Reduced cooling effort

Highest efficiency

Increased power density

Higher frequency operation

 

 

IMW120R030M1HXKSA1 Applications

 

DC-AC inverters

Bi-directional topologies

Power factor correction circuits

DC-DC converters


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