Description

A single N-channel MOSFET called the FDS8447 was created using the cutting-edge PowerTrench? method. It has been specifically designed to reduce the resistance in the ON-state while yet delivering excellent switching performance. An N-Channel MOSFET makes a current channel out of electrons. This makes it possible for electrons to pass swiftly and readily across the current when the MOSFET is turned on. Since of the unique properties of N-Channel MOSFETs, the P-Channel chip must be 2 to 3 times larger than the N-Channel chip because the mobility of the carriers is around 2 to 3 times higher for the same RDS(on) value. It is common practice to use MOSFET transistor N-Channels in high current applications because of this.

Features

• Low gate charge

• High performance Trench technology for extremely low RDS (ON)

• High power and current handing capability

• RoHS compliant

• Max rDS(on)=10.5mΩ at VGS=10V, ID=12.8A

• Max rDS(on)=12.3mΩ at VGS-4.5V, ID=11.4A

Applications

• DC-DC conversion

• Small motor control

• Solar inverters

• Automotive applications

• Switch, buck and synchronous rectification