IPI100N04S4H2AKSA1

new-10%

Manufacturer part number:IPI100N04S4H2AKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 40V 100A TO262-3-1

Case Package:SOT-23

Datasheet:IPI100N04S4H2AKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2012
Series	OptiMOS™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	115W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	18 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.7m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 70μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	7180pF @ 25V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Rise Time	13ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	21 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	40V
Drain-source On Resistance-Max	0.0027Ohm
Pulsed Drain Current-Max (IDM)	400A
Avalanche Energy Rating (Eas)	280 mJ
RoHS Status	RoHS Compliant
Lead Free	Contains Lead