IPA50R199CPXKSA1

new-10%

Manufacturer part number:IPA50R199CPXKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 500V 17A TO220-3

Case Package:SOT-23

Datasheet:IPA50R199CPXKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	139W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	139W
Case Connection	ISOLATED
Turn On Delay Time	35 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	199m Ω @ 9.9A, 10V
Vgs(th) (Max) @ Id	3.5V @ 660μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 100V
Current - Continuous Drain (Id) @ 25°C	17A Tc
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Rise Time	14ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	17A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.199Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	40A
Dual Supply Voltage	550V
Nominal Vgs	3 V
Height	16.15mm
Length	10.65mm
Width	4.85mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant