SIHP22N60E-E3

new-10%

Manufacturer part number:SIHP22N60E-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 600V 21A TO220AB

Case Package:SOT-23

Datasheet:SIHP22N60E-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	6.000006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Resistance	180mOhm
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	227W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	227W
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	180m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1920pF @ 100V
Current - Continuous Drain (Id) @ 25°C	21A Tc
Gate Charge (Qg) (Max) @ Vgs	86nC @ 10V
Rise Time	68ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	54 ns
Turn-Off Delay Time	59 ns
Continuous Drain Current (ID)	21A
Threshold Voltage	2V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	56A
DS Breakdown Voltage-Min	600V
Height	15.49mm
Length	10.51mm
Width	4.65mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free