BUK662R7-55C,118

new-10%

Manufacturer part number:BUK662R7-55C,118

Manufacturer:Nexperia USA Inc.

Description:MOSFET N-CH 55V 120A D2PAK

Case Package:SOT-23

Datasheet:BUK662R7-55C,118 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Resistance	2.7MOhm
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Reach Compliance Code	not_compliant
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	306W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	306W
Case Connection	DRAIN
Turn On Delay Time	61 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.7m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	2.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	15300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	258nC @ 10V
Rise Time	101ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±16V
Fall Time (Typ)	186 ns
Turn-Off Delay Time	450 ns
Continuous Drain Current (ID)	120A
Gate to Source Voltage (Vgs)	16V
Max Dual Supply Voltage	55V
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	907A
Avalanche Energy Rating (Eas)	724 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Lead Free