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IPA50R250CPXKSA1

IPA50R250CPXKSA1

IPA50R250CPXKSA1

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tube 250m Ω @ 7.8A, 10V ±20V 1420pF @ 100V 36nC @ 10V TO-220-3 Full Pack

SOT-23

IPA50R250CPXKSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series CoolMOS™
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 33W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 33W
Case Connection ISOLATED
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 250m Ω @ 7.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 520μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1420pF @ 100V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 13A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 500V
Drain-source On Resistance-Max 0.25Ohm
FET Feature Super Junction
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.06000 $3.06
10 $2.78100 $27.81
100 $2.26570 $226.57
500 $1.79818 $899.09
1,000 $1.51761 $1.51761
IPA50R250CPXKSA1 Product Details

IPA50R250CPXKSA1 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1420pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 13A amps.It is [80 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 35 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 500V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).

IPA50R250CPXKSA1 Features


a continuous drain current (ID) of 13A
the turn-off delay time is 80 ns


IPA50R250CPXKSA1 Applications


There are a lot of Infineon Technologies
IPA50R250CPXKSA1 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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