NTR4101PT1H datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NTR4101PT1H Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Number of Elements
1
Power Dissipation-Max
420mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
85m Ω @ 1.6A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
675pF @ 10V
Current - Continuous Drain (Id) @ 25°C
1.8A Ta
Gate Charge (Qg) (Max) @ Vgs
8.5nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±8V
Continuous Drain Current (ID)
1.8A
Drain Current-Max (Abs) (ID)
2.4A
Drain-source On Resistance-Max
0.085Ohm
DS Breakdown Voltage-Min
20V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
NTR4101PT1H Product Details
NTR4101PT1H Description
NTR4101PT1H belongs to the family of P-channel power MOSFETs manufactured by ON Semiconductor for ultra-low RDS (on) based on advanced trench technology. Based on its specific characteristics, it is well suited for charging circuits, power management, and battery protection.