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IPA60R230P6XKSA1

IPA60R230P6XKSA1

IPA60R230P6XKSA1

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tube 230mOhm @ 6.4A, 10V ±20V 1450pF @ 100V 31nC @ 10V 600V TO-220-3 Full Pack

SOT-23

IPA60R230P6XKSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Supplier Device Package PG-TO220-FP
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series CoolMOS™ P6
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 33W Tc
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 230mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 530μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1450pF @ 100V
Current - Continuous Drain (Id) @ 25°C 16.8A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 7ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 16.8A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain to Source Breakdown Voltage 600V
Input Capacitance 1.45nF
Drain to Source Resistance 207mOhm
Rds On Max 230 mΩ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.88000 $2.88
10 $2.59700 $25.97
100 $2.08720 $208.72
500 $1.62336 $811.68
1,000 $1.34506 $1.34506
IPA60R230P6XKSA1 Product Details

IPA60R230P6XKSA1 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1450pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 16.8A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [38 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 207mOhm.A turn-on delay time of 12 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 600V, it can support the maximum dual supply voltage.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IPA60R230P6XKSA1 Features


a continuous drain current (ID) of 16.8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 38 ns
single MOSFETs transistor is 207mOhm
a 600V drain to source voltage (Vdss)


IPA60R230P6XKSA1 Applications


There are a lot of Infineon Technologies
IPA60R230P6XKSA1 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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