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IPA60R380P6XKSA1

IPA60R380P6XKSA1

IPA60R380P6XKSA1

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tube 380mOhm @ 3.8A, 10V ±20V 877pF @ 100V 19nC @ 10V 600V TO-220-3 Full Pack

SOT-23

IPA60R380P6XKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Supplier Device Package PG-TO220-FP
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series CoolMOS™ P6
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 31W Tc
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 380mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 4.5V @ 320μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 877pF @ 100V
Current - Continuous Drain (Id) @ 25°C 10.6A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Rise Time 6ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 10.6A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Input Capacitance 877pF
Drain to Source Resistance 342mOhm
Rds On Max 380 mΩ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.08000 $2.08
10 $1.88600 $18.86
100 $1.53670 $153.67
500 $1.21952 $609.76
IPA60R380P6XKSA1 Product Details

IPA60R380P6XKSA1 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 877pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 10.6A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 33 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 342mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 600V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.

IPA60R380P6XKSA1 Features


a continuous drain current (ID) of 10.6A
the turn-off delay time is 33 ns
single MOSFETs transistor is 342mOhm
a 600V drain to source voltage (Vdss)


IPA60R380P6XKSA1 Applications


There are a lot of Infineon Technologies
IPA60R380P6XKSA1 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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