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FDD4141

FDD4141

FDD4141

ON Semiconductor

FDD4141 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDD4141 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 hours ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 12.3MOhm
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.4W Ta 69W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.4W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12.3m Ω @ 12.7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2775pF @ 20V
Current - Continuous Drain (Id) @ 25°C 10.8A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time 7ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 10.8A
Threshold Voltage -1.8V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 50A
Drain to Source Breakdown Voltage -40V
Max Junction Temperature (Tj) 150°C
Nominal Vgs -1.8 V
Height 2.517mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.47270 $0.9454
5,000 $0.45037 $2.25185
12,500 $0.43442 $5.21304
FDD4141 Product Details

FDD4141 Description

This P-Channel MOSFET has been produced using a proprietary PowerTrench? technology to deliver low RDS(on) and optimized Bvdss capability to offer superior performance benefits in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.



FDD4141 Features

Maximum RDS(on) = 12.3m|? at VGS = -10V, ID = -12.7A

Maximum RDS(on) = 18.0m|? at VGS = -4.5V, ID = -10.4A

High performance trench technology for extremely low RDS(on)

RoHS Compliant



FDD4141 Applications

This product is general usage and suitable for many different applications.



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