SCTH35N65G2V-7

new-10%

Manufacturer part number:SCTH35N65G2V-7

Manufacturer:STMicroelectronics

Description:SILICON CARBIDE POWER MOSFET 650

Case Package:SOT-23

Datasheet:SCTH35N65G2V-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mounting Type	Surface Mount
Package / Case	TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
Operating Temperature	-55°C~175°C TJ
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	SiCFET (Silicon Carbide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Power Dissipation-Max	208W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	67m Ω @ 20A, 20V
Vgs(th) (Max) @ Id	3.2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1370pF @ 400V
Current - Continuous Drain (Id) @ 25°C	45A Tc
Gate Charge (Qg) (Max) @ Vgs	73nC @ 20V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	18V 20V
Vgs (Max)	+22V, -10V
RoHS Status	Non-RoHS Compliant