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IPA90R1K2C3XKSA1

IPA90R1K2C3XKSA1

IPA90R1K2C3XKSA1

Infineon Technologies

N-Channel Tube 1.2 Ω @ 2.8A, 10V ±20V 710pF @ 100V 28nC @ 10V 900V TO-220-3 Full Pack

SOT-23

IPA90R1K2C3XKSA1 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 29 Weeks
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series CoolMOS™
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 31W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 310μA
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 100V
Current - Continuous Drain (Id) @ 25°C 5.1A Tc
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 3.1A
Pulsed Drain Current-Max (IDM) 10A
DS Breakdown Voltage-Min 900V
Avalanche Energy Rating (Eas) 68 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.91000 $1.91
10 $1.74000 $17.4
100 $1.41780 $141.78
500 $1.12518 $562.59
1,000 $0.94962 $0.94962
IPA90R1K2C3XKSA1 Product Details

IPA90R1K2C3XKSA1 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 68 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 710pF @ 100V maximal input capacitance.A device can conduct a maximum continuous current of [3.1A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 10A.The DS breakdown voltage should be maintained above 900V to maintain normal operation.To operate this transistor, you will need a 900V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IPA90R1K2C3XKSA1 Features


the avalanche energy rating (Eas) is 68 mJ
based on its rated peak drain current 10A.
a 900V drain to source voltage (Vdss)


IPA90R1K2C3XKSA1 Applications


There are a lot of Infineon Technologies
IPA90R1K2C3XKSA1 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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