IPB120N04S3-02

new-10%

Manufacturer part number:IPB120N04S3-02

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 40V 120A TO263-3

Case Package:SOT-23

Datasheet:IPB120N04S3-02 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	ULTRA LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	300W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 230μA
Input Capacitance (Ciss) (Max) @ Vds	14300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	210nC @ 10V
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	120A
Drain-source On Resistance-Max	0.0023Ohm
Pulsed Drain Current-Max (IDM)	480A
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	1880 mJ
RoHS Status	RoHS Compliant