IPB180N03S4L01ATMA1

new-10%

Manufacturer part number:IPB180N03S4L01ATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 180A TO263-7-3

Case Package:SOT-23

Datasheet:IPB180N03S4L01ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins	7
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	ULTRA-LOW RESISTANCE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Reference Standard	AEC-Q101
JESD-30 Code	R-PSSO-G6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	188W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	8 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.05m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	2.2V @ 140μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	17600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	180A Tc
Gate Charge (Qg) (Max) @ Vgs	239nC @ 10V
Rise Time	5ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	23 ns
Turn-Off Delay Time	57 ns
Continuous Drain Current (ID)	180A
Gate to Source Voltage (Vgs)	16V
Max Dual Supply Voltage	30V
Drain-source On Resistance-Max	0.00105Ohm
Avalanche Energy Rating (Eas)	530 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead