BUK9612-55B,118

new-10%

Manufacturer part number:BUK9612-55B,118

Manufacturer:Nexperia USA Inc.

Description:MOSFET N-CH 55V 75A D2PAK

Case Package:SOT-23

Datasheet:BUK9612-55B,118 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE
HTS Code	8541.29.00.75
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	157W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	157W
Case Connection	DRAIN
Turn On Delay Time	19 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	3693pF @ 25V
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	31nC @ 5V
Rise Time	101ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±15V
Fall Time (Typ)	75 ns
Turn-Off Delay Time	96 ns
Continuous Drain Current (ID)	79A
Gate to Source Voltage (Vgs)	15V
Max Dual Supply Voltage	55V
Drain Current-Max (Abs) (ID)	75A
Drain to Source Breakdown Voltage	55V
Avalanche Energy Rating (Eas)	172 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant