IPB22N03S4L15ATMA1

new-10%

Manufacturer part number:IPB22N03S4L15ATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 22A TO263-3

Case Package:SOT-23

Datasheet:IPB22N03S4L15ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	ULTRA LOW RESISTANCE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	31W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	14.6m Ω @ 22A, 10V
Vgs(th) (Max) @ Id	2.2V @ 10μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	980pF @ 25V
Current - Continuous Drain (Id) @ 25°C	22A Tc
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Continuous Drain Current (ID)	22A
Max Dual Supply Voltage	30V
Drain-source On Resistance-Max	0.0146Ohm
Pulsed Drain Current-Max (IDM)	88A
Avalanche Energy Rating (Eas)	20 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead