IPB45N06S3L-13

new-10%

Manufacturer part number:IPB45N06S3L-13

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 45A TO-263

Case Package:SOT-23

Datasheet:IPB45N06S3L-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	45A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	65W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	65W
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	13.1m Ω @ 26A, 10V
Vgs(th) (Max) @ Id	2.2V @ 30μA
Input Capacitance (Ciss) (Max) @ Vds	3600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	45A Tc
Gate Charge (Qg) (Max) @ Vgs	75nC @ 10V
Rise Time	46ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	124 ns
Turn-Off Delay Time	58 ns
Continuous Drain Current (ID)	45A
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	55V
Avalanche Energy Rating (Eas)	95 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free