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IRF7475PBF

IRF7475PBF

IRF7475PBF

Infineon Technologies

MOSFET N-CH 12V 11A 8-SOIC

SOT-23

IRF7475PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 15MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 12V
Technology MOSFET (Metal Oxide)
Current Rating 11A
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Power Dissipation 2.5W
Turn On Delay Time 7.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 15mOhm @ 8.8A, 4.5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1590pF @ 6V
Current - Continuous Drain (Id) @ 25°C 11A Ta
Gate Charge (Qg) (Max) @ Vgs 19nC @ 4.5V
Rise Time 33ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 2.8V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 7.5 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 12V
Input Capacitance 1.59nF
Drain to Source Resistance 15mOhm
Rds On Max 15 mΩ
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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