IXFR66N50Q2

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Manufacturer part number:IXFR66N50Q2

Manufacturer:IXYS

Description:MOSFET N-CH 500V 50A ISOPLUS247

Case Package:SOT-23

Datasheet:IXFR66N50Q2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	HiPerFET™
JESD-609 Code	e1
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	500W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	85m Ω @ 33A, 10V
Vgs(th) (Max) @ Id	5.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	9125pF @ 25V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	200nC @ 10V
Rise Time	16ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	50A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.085Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	264A
Avalanche Energy Rating (Eas)	4000 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free