IPB60R190P6ATMA1

new-10%

Manufacturer part number:IPB60R190P6ATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 600V TO263-3

Case Package:SOT-23

Datasheet:IPB60R190P6ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2008
Series	CoolMOS™ P6
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	151W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	190m Ω @ 7.6A, 10V
Vgs(th) (Max) @ Id	4.5V @ 630μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1750pF @ 100V
Current - Continuous Drain (Id) @ 25°C	20.2A Tc
Gate Charge (Qg) (Max) @ Vgs	37nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	20.2A
Max Dual Supply Voltage	600V
Drain-source On Resistance-Max	0.19Ohm
Pulsed Drain Current-Max (IDM)	57A
Avalanche Energy Rating (Eas)	419 mJ
RoHS Status	RoHS Compliant
Lead Free	Contains Lead