IPB65R045C7ATMA1

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IPB65R045C7ATMA1

Manufacturer part number:IPB65R045C7ATMA1

Manufacturer:Infineon Technologies

Description:IPB65R045C7ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IPB65R045C7ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	CoolMOS™ C7
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	227W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	227W
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	45m Ω @ 24.9A, 10V
Vgs(th) (Max) @ Id	4V @ 1.25mA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	4340pF @ 400V
Current - Continuous Drain (Id) @ 25°C	46A Tc
Gate Charge (Qg) (Max) @ Vgs	93nC @ 10V
Rise Time	14ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	82 ns
Continuous Drain Current (ID)	46A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	650V
Drain-source On Resistance-Max	0.045Ohm
Avalanche Energy Rating (Eas)	249 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead