IPB65R125C7ATMA1

new-10%

Manufacturer part number:IPB65R125C7ATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH TO263-3

Case Package:SOT-23

Datasheet:IPB65R125C7ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	CoolMOS™ C7
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	101W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	125m Ω @ 8.9A, 10V
Vgs(th) (Max) @ Id	4V @ 440μA
Input Capacitance (Ciss) (Max) @ Vds	1670pF @ 400V
Current - Continuous Drain (Id) @ 25°C	18A Ta
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	18A
Drain-source On Resistance-Max	0.125Ohm
Pulsed Drain Current-Max (IDM)	75A
DS Breakdown Voltage-Min	650V
Avalanche Energy Rating (Eas)	89 mJ
RoHS Status	ROHS3 Compliant