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IRFB3507PBF

IRFB3507PBF

IRFB3507PBF

Infineon Technologies

MOSFET N-CH 75V 97A TO-220AB

SOT-23

IRFB3507PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 75V
Technology MOSFET (Metal Oxide)
Current Rating 97A
Number of Elements 1
Power Dissipation-Max 190W Tc
Power Dissipation 190W
Turn On Delay Time 20 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.8mOhm @ 58A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3540pF @ 50V
Current - Continuous Drain (Id) @ 25°C 97A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 81ns
Drain to Source Voltage (Vdss) 75V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 49 ns
Turn-Off Delay Time 52 ns
Continuous Drain Current (ID) 97A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Input Capacitance 3.54nF
Drain to Source Resistance 7mOhm
Rds On Max 8.8 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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