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SI7495DP-T1-E3

SI7495DP-T1-E3

SI7495DP-T1-E3

Vishay Siliconix

MOSFET P-CH 12V 13A PPAK SO-8

SOT-23

SI7495DP-T1-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Supplier Device Package PowerPAK® SO-8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.8W Ta
Element Configuration Single
Power Dissipation 1.8W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 6.5mOhm @ 21A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 1mA
Current - Continuous Drain (Id) @ 25°C 13A Ta
Gate Charge (Qg) (Max) @ Vgs 140nC @ 5V
Rise Time 200ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 200 ns
Turn-Off Delay Time 350 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 12V
Drain to Source Resistance 6.5mOhm
Rds On Max 6.5 mΩ
RoHS Status ROHS3 Compliant

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