IPB65R190C6ATMA1

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Manufacturer part number:IPB65R190C6ATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 650V 20.2A TO263

Case Package:SOT-23

Datasheet:IPB65R190C6ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	151W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	190m Ω @ 7.3A, 10V
Vgs(th) (Max) @ Id	3.5V @ 730μA
Input Capacitance (Ciss) (Max) @ Vds	1620pF @ 100V
Current - Continuous Drain (Id) @ 25°C	20.2A Tc
Gate Charge (Qg) (Max) @ Vgs	73nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain-source On Resistance-Max	0.19Ohm
Pulsed Drain Current-Max (IDM)	66A
DS Breakdown Voltage-Min	650V
Avalanche Energy Rating (Eas)	485 mJ
RoHS Status	RoHS Compliant