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APT56F50B2

APT56F50B2

APT56F50B2

Microsemi Corporation

MOSFET (Metal Oxide) N-Channel Tube 100m Ω @ 28A, 10V ±30V 8800pF @ 25V 220nC @ 10V 500V TO-247-3 Variant

SOT-23

APT56F50B2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Factory Lead Time 22 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series POWER MOS 8™
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish PURE MATTE TIN
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 780W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 780W
Turn On Delay Time 38 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 28A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 8800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 56A Tc
Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V
Rise Time 45ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 33 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 56A
JEDEC-95 Code TO-247AB
Gate to Source Voltage (Vgs) 30V
DS Breakdown Voltage-Min 500V
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $14.14000 $14.14
10 $12.85200 $128.52
100 $10.92420 $1092.42
500 $9.31770 $4658.85
1,000 $8.99640 $8.9964
APT56F50B2 Product Details

APT56F50B2 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 8800pF @ 25V.This device conducts a continuous drain current (ID) of 56A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 100 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 38 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 500V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

APT56F50B2 Features


a continuous drain current (ID) of 56A
the turn-off delay time is 100 ns
a 500V drain to source voltage (Vdss)


APT56F50B2 Applications


There are a lot of Microsemi Corporation
APT56F50B2 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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