IPB65R225C7ATMA1

new-10%

Manufacturer part number:IPB65R225C7ATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 650V 11A 3-Pin(2+Tab) TO-263 T/R

Case Package:SOT-23

Datasheet:IPB65R225C7ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight	3.949996g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	CoolMOS™ C7
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	63W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	63W
Case Connection	DRAIN
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	225m Ω @ 4.8A, 10V
Vgs(th) (Max) @ Id	4V @ 240μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	996pF @ 400V
Current - Continuous Drain (Id) @ 25°C	11A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	6ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	48 ns
Continuous Drain Current (ID)	11A
JEDEC-95 Code	TO-252
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	650V
Drain-source On Resistance-Max	0.225Ohm
Drain to Source Breakdown Voltage	650V
Avalanche Energy Rating (Eas)	48 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead