IPB70N10SL16ATMA1

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Manufacturer part number:IPB70N10SL16ATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 100V 70A Automotive 3-Pin(2+Tab) TO-263

Case Package:SOT-23

Datasheet:IPB70N10SL16ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	SIPMOS®
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	250W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250W
Turn On Delay Time	70 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	16m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	2V @ 2mA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	4540pF @ 25V
Current - Continuous Drain (Id) @ 25°C	70A Tc
Gate Charge (Qg) (Max) @ Vgs	240nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	95 ns
Turn-Off Delay Time	250 ns
Continuous Drain Current (ID)	70A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	100V
Drain-source On Resistance-Max	0.025Ohm
Pulsed Drain Current-Max (IDM)	280A
Avalanche Energy Rating (Eas)	700 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead