IPB80N03S4L02ATMA1

new-10%

Manufacturer part number:IPB80N03S4L02ATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 80A TO263-3

Case Package:SOT-23

Datasheet:IPB80N03S4L02ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	ULTRA LOW RESISTANCE
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	136W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.4m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	2.2V @ 90μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	9750pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	140nC @ 10V
Rise Time	9ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	62 ns
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	16V
Max Dual Supply Voltage	30V
Drain-source On Resistance-Max	0.0024Ohm
Avalanche Energy Rating (Eas)	260 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead