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RJK1003DPN-A0#T2

  • RJK1003DPN-A0#T2
  • RJK1003DPN-A0#T2

RJK1003DPN-A0#T2

RJK1003DPN-A0#T2

Renesas Electronics America

MOSFET (Metal Oxide) N-Channel 11m Ω @ 25A, 10V ±20V 4150pF @ 10V 59nC @ 10V 100V TO-220-3

SOT-23

RJK1003DPN-A0#T2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature 150°C
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 125W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4150pF @ 10V
Current - Continuous Drain (Id) @ 25°C 50A Ta
Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.70000 $3.7
500 $3.663 $1831.5
1000 $3.626 $3626
1500 $3.589 $5383.5
2000 $3.552 $7104
2500 $3.515 $8787.5
RJK1003DPN-A0#T2 Product Details

RJK1003DPN-A0#T2 Overview


A device's maximal input capacitance is 4150pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

RJK1003DPN-A0#T2 Features


a 100V drain to source voltage (Vdss)


RJK1003DPN-A0#T2 Applications


There are a lot of Renesas Electronics America
RJK1003DPN-A0#T2 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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