IPB80N04S306ATMA1

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Manufacturer part number:IPB80N04S306ATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) TO-263

Case Package:SOT-23

Datasheet:IPB80N04S306ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	ULTRA LOW RESISTANCE
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	100W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5.4m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 52μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	3250pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	47nC @ 10V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	40V
Drain-source On Resistance-Max	0.0054Ohm
Avalanche Energy Rating (Eas)	125 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead