IPB80N06S2LH5ATMA4

new-10%

Manufacturer part number:IPB80N06S2LH5ATMA4

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 80A TO263-3

Case Package:SOT-23

Datasheet:IPB80N06S2LH5ATMA4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Reach Compliance Code	not_compliant
Reference Standard	AEC-Q101
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
Turn On Delay Time	19 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.7m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	5000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	190nC @ 10V
Rise Time	23ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	55V
Drain-source On Resistance-Max	0.0062Ohm
Drain to Source Breakdown Voltage	55V
Avalanche Energy Rating (Eas)	700 mJ
Height	4.4mm
Length	10mm
Width	9.25mm
RoHS Status	ROHS3 Compliant